| CPC H10H 20/018 (2025.01) [H10H 20/857 (2025.01); H10H 20/0364 (2025.01)] | 5 Claims |
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1. A method of manufacturing a flip chip semiconductor light emitting device, the method comprising:
providing a growth substrate on which a first N-type semiconductor region, an active region for generating light by electron-hole recombination, and a second P-type semiconductor region are sequentially grown;
forming a protective layer on the second semiconductor region;
bonding a first light transmitting substrate to the second semiconductor region;
removing the growth substrate from the first semiconductor region;
attaching a second light transmitting substrate through an adhesive layer to the first semiconductor region from which the growth substrate is removed;
laser ablating the first light transmitting substrate from the second semiconductor region;
partially removing the second semiconductor region and the active region to expose part of the first semiconductor region; and
forming a first flip chip electrode and a second flip chip electrode on the exposed first semiconductor region and the exposed second semiconductor region, respectively,
wherein forming the protective layer on the second semiconductor region is carried out before bonding the first light transmitting substrate.
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