US 12,389,710 B2
Full well capacity for image sensor
Kai-Yun Yang, Tainan (TW); Chun-Yuan Chen, Tainan (TW); and Ching I Li, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Jun. 15, 2023, as Appl. No. 18/335,171.
Application 18/335,171 is a division of application No. 17/025,033, filed on Sep. 18, 2020, granted, now 11,721,774.
Claims priority of provisional application 62/982,559, filed on Feb. 27, 2020.
Prior Publication US 2023/0343883 A1, Oct. 26, 2023
Int. Cl. H01L 27/146 (2006.01); H10F 30/221 (2025.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01); H10F 71/00 (2025.01); H10F 77/124 (2025.01); H10F 77/14 (2025.01)
CPC H10F 77/1243 (2025.01) [H10F 30/2215 (2025.01); H10F 39/028 (2025.01); H10F 39/18 (2025.01); H10F 71/128 (2025.01); H10F 77/148 (2025.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor comprising:
a photodetector disposed in a semiconductor substrate, wherein the photodetector comprises a first doped region comprising a first dopant having a first doping type;
a deep well region disposed within the semiconductor substrate, wherein the deep well region extends from a back-side surface of the semiconductor substrate to a top of the first doped region;
a second doped region disposed within the semiconductor substrate and abutting the first doped region, wherein the second doped region and the deep well region comprise a second dopant having a second doping type opposite the first doping type;
an isolation structure disposed within the semiconductor substrate, wherein the isolation structure extends from the back-side surface of the semiconductor substrate to a point below the back-side surface; and
a doped liner disposed between the isolation structure and the second doped region, wherein the doped liner comprises the second dopant, wherein the first doped region is arranged between opposing sidewalls of the doped liner, wherein the second doped region vertically extends along the opposing sidewalls of the doped liner and laterally spaces the first doped region from the opposing sidewalls of the doped liner and opposing sidewalls of the isolation structure.