| CPC H10D 84/834 (2025.01) [H10D 30/024 (2025.01); H10D 30/6735 (2025.01); H10D 64/015 (2025.01)] | 20 Claims |
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1. A method, comprising:
forming a polysilicon structure on a fin structure;
forming a gate spacer along a sidewall of the polysilicon structure;
forming an epitaxial region on the fin structure;
replacing the polysilicon structure with a gate structure adjacent to the gate spacer;
forming an air spacer between the gate structure and the gate spacer;
forming a spacer seal on the air spacer;
forming, on the gate structure, an air cap comprising etching the gate structure to expose a sidewall of the gate spacer; and
forming a cap seal on the air cap and the spacer seal.
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