US 12,389,650 B2
Semiconductor device and electronic device
Takayuki Ikeda, Atsugi (JP); Hitoshi Kunitake, Isehara (JP); Hajime Kimura, Atsugi (JP); and Haruyuki Baba, Isehara (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Appl. No. 17/611,933
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
PCT Filed May 11, 2020, PCT No. PCT/IB2020/054412
§ 371(c)(1), (2) Date Nov. 17, 2021,
PCT Pub. No. WO2020/240311, PCT Pub. Date Dec. 3, 2020.
Claims priority of application No. 2019-097502 (JP), filed on May 24, 2019; application No. 2019-100889 (JP), filed on May 30, 2019; application No. 2019-102131 (JP), filed on May 31, 2019; and application No. 2019-115159 (JP), filed on Jun. 21, 2019.
Prior Publication US 2022/0231131 A1, Jul. 21, 2022
Int. Cl. H03F 1/22 (2006.01); H01L 23/66 (2006.01); H03F 3/193 (2006.01); H10D 62/80 (2025.01); H10D 84/01 (2025.01); H10D 84/80 (2025.01)
CPC H10D 62/80 (2025.01) [H01L 23/66 (2013.01); H03F 3/193 (2013.01); H10D 84/01 (2025.01); H10D 84/811 (2025.01); H01L 2223/6677 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising a first transistor, a second transistor, a third transistor, a capacitor, and a functional element,
wherein one of a source and a drain of the first transistor is electrically connected to a first terminal,
wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,
wherein a gate of the first transistor is electrically connected to a second terminal,
wherein the other of the source and the drain of the second transistor is electrically connected to a third terminal,
wherein the other of the source and the drain of the second transistor is electrically connected to the functional element,
wherein one of a source and a drain of the third transistor is electrically connected to a fourth terminal,
wherein the other of the source and the drain of the third transistor is electrically connected to a gate of the second transistor,
wherein a gate of the third transistor is electrically connected to a fifth terminal,
wherein the capacitor is electrically connected to the other of the source and the drain of the third transistor,
wherein a semiconductor layer of the third transistor comprises an oxide semiconductor,
wherein the functional element comprises a resistor, a constant current source, or a parallel resonant circuit, and
wherein at least one of the first transistor to the third transistor is a multi-gate transistor.