| CPC H10D 62/107 (2025.01) [H10D 30/665 (2025.01); H10D 30/668 (2025.01); H10D 62/105 (2025.01); H10D 62/157 (2025.01); H10D 62/393 (2025.01); H10D 62/8325 (2025.01); H10D 62/106 (2025.01)] | 20 Claims |
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1. A semiconductor device, comprising
a silicon carbide semiconductor body that includes a drift region of a first conductivity type, and in which an active region and an edge termination structure region outside the active region are provided, wherein
the edge termination structure region includes:
a first semiconductor region of a second conductivity type, provided between the drift region and a first main surface of the silicon carbide semiconductor body, the first semiconductor region being provided outside the active region and separated from the first main surface;
a plurality of second semiconductor regions of the second conductivity type, each of which is provided between the first main surface and the first semiconductor region; and
a plurality of third semiconductor regions of the first conductivity type, each of which separates adjacent two of the second semiconductor regions from each other in a lateral direction, and
a bottom surface of each of the second semiconductor regions is in contact with a top surface of the first semiconductor region so that an impurity concentration in the first semiconductor region, in a direction parallel to the first main surface of the silicon carbide semiconductor body, is substantially uniform.
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