US 12,389,638 B2
Method of forming fully strained channels
Shahaji B. More, Hsinchu (TW); Shu Kuan, Keelung (TW); and Cheng-Han Lee, New Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Jun. 5, 2023, as Appl. No. 18/329,214.
Application 18/329,214 is a division of application No. 17/207,058, filed on Mar. 19, 2021, granted, now 11,670,681.
Claims priority of provisional application 63/137,592, filed on Jan. 14, 2021.
Prior Publication US 2023/0317795 A1, Oct. 5, 2023
Int. Cl. H10D 30/69 (2025.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 23/544 (2006.01); H10D 62/832 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01)
CPC H10D 30/751 (2025.01) [H01L 21/02532 (2013.01); H01L 21/30604 (2013.01); H01L 21/30625 (2013.01); H01L 21/308 (2013.01); H01L 23/544 (2013.01); H10D 62/832 (2025.01); H10D 84/0167 (2025.01); H10D 84/0188 (2025.01); H10D 84/0191 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 84/853 (2025.01); H10D 84/859 (2025.01); H01L 2223/54426 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a substrate;
a first fin extending from the substrate, wherein the first fin includes a bottom portion and an upper portion over the bottom portion, the upper portion and the bottom portion include different materials, and the upper portion includes silicon germanium; and
an alignment mark over the substrate and having one or more dielectric layers extending above a top surface of the substrate, wherein a top surface of the first fin is substantially coplanar with a top surface of the one or more dielectric layers,
wherein the bottom portion of the first fin is an N well portion of the substrate, and a bottom surface of the N well portion is substantially coplanar with a bottom surface of the alignment mark.