US 12,389,627 B2
Silicon germanium fins and integration methods
Hong Yu, Clifton Park, NY (US); Haiting Wang, Clifton Park, NY (US); and Zhenyu Hu, Clifton Park, NY (US)
Assigned to GlobalFoundries U.S. Inc., Malta, NY (US)
Filed by GlobalFoundries U.S. Inc., Malta, NY (US)
Filed on Dec. 16, 2021, as Appl. No. 17/644,563.
Prior Publication US 2023/0197849 A1, Jun. 22, 2023
Int. Cl. H10D 30/62 (2025.01); H10D 30/01 (2025.01); H10D 62/832 (2025.01)
CPC H10D 30/62 (2025.01) [H10D 30/024 (2025.01); H10D 62/832 (2025.01)] 14 Claims
OG exemplary drawing
 
1. A structure comprising:
a substrate having a top surface;
a first silicon germanium fin over the substrate and extending vertically from the top surface of the substrate, the first silicon germanium fin is of a different material from substrate material of the substrate;
a first silicon germanium layer in the substrate and beneath the top surface of the substrate, wherein the first silicon germanium layer contacts the first silicon germanium fin; and
a second silicon germanium layer in the substrate and beneath the top surface of the substrate, wherein the second silicon germanium layer contacts the first silicon germanium fin, wherein
the first silicon germanium fin has a bottom surface, the first silicon germanium layer has a first side, the second silicon germanium layer has a first side, and the first side of the first silicon germanium layer and the first side of the second silicon germanium layer underlaps the bottom surface of the first silicon germanium fin, and
a silicon fin over the substrate; and
an isolation structure in the substrate between the first silicon germanium fin and the silicon fin, wherein the first silicon germanium layer has a second side which contacts the isolation structure.