US 12,389,623 B2
Nitride semiconductor device
Yosuke Hata, Kyoto (JP)
Assigned to ROHM CO., LTD., Kyoto (JP)
Filed by ROHM CO., LTD., Kyoto (JP)
Filed on Jul. 6, 2022, as Appl. No. 17/858,168.
Claims priority of application No. 2021-114156 (JP), filed on Jul. 9, 2021.
Prior Publication US 2023/0009662 A1, Jan. 12, 2023
Int. Cl. H10D 30/47 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01)
CPC H10D 30/475 (2025.01) [H10D 62/824 (2025.01); H10D 62/8503 (2025.01)] 16 Claims
OG exemplary drawing
 
1. A nitride semiconductor device, comprising:
an electron transport layer, made of a nitride semiconductor;
an electron supply layer, disposed on the electron transport layer and made of a nitride semiconductor having a band gap greater than a band gap of the nitride semiconductor of the electron transport layer;
a first protective layer, disposed on the electron supply layer and made of a nitride semiconductor having a band gap less than the band gap of the nitride semiconductor of the electron supply layer;
a second protective layer, disposed on a portion of the first protective layer and made of a nitride semiconductor having a band gap greater than the band gap of the nitride semiconductor of the first protective layer;
a gate layer, disposed on the second protective layer and made of a nitride semiconductor that has a band gap less than the band gap of the nitride semiconductor of the second protective layer and contains acceptor-type impurities;
a gate electrode, disposed on the gate layer; and
a source electrode and a drain electrode, connected with the electron supply layer, wherein
an area of the second protective layer is same as an area of a bottom surface of the gate layer in a top plan view,
the gate layer includes:
a gate body, on which the gate electrode is located; and
an inclined portion, inclined outwardly from a side surface of the gate body, and
the gate layer further includes a flat portion extending from the inclined portion along the second protective laver.