US 12,389,621 B2
Semiconductor structure with diffusion blocking layer and preparing method for semiconductor structure
Kai Cheng, Suzhou (CN)
Assigned to ENKRIS SEMICONDUCTOR, INC., Suzhou (CN)
Filed by ENKRIS SEMICONDUCTOR, INC., Suzhou (CN)
Filed on Nov. 26, 2021, as Appl. No. 17/535,934.
Application 17/535,934 is a continuation of application No. PCT/CN2019/090554, filed on Jun. 10, 2019.
Prior Publication US 2022/0085195 A1, Mar. 17, 2022
Int. Cl. H10D 30/47 (2025.01); H10D 30/01 (2025.01); H10D 62/85 (2025.01); H10D 62/854 (2025.01)
CPC H10D 30/47 (2025.01) [H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 62/8503 (2025.01); H10D 62/854 (2025.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor structure, including:
a buffer layer including a diffusion element;
a diffusion blocking layer formed on the buffer layer, the diffusion blocking layer including an adsorptive element; and
a channel layer formed on the diffusion blocking layer;
wherein a composition of the adsorptive element in the diffusion blocking layer decreases along an epitaxial growth direction of the diffusion blocking layer.