US 12,389,612 B2
Method of forming a stress reduction structure for metal-insulator-metal capacitors
Jin-Mu Yin, Kaohsiung (TW); Hung-Chao Kao, Taipei (TW); Hsiang-Ku Shen, Hsinchu (TW); Dian-Hau Chen, Hsinchu (TW); and Yen-Ming Chen, Hsin-Chu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 26, 2022, as Appl. No. 17/815,207.
Application 17/815,207 is a division of application No. 16/948,527, filed on Sep. 22, 2020, granted, now 11,532,695.
Claims priority of provisional application 62/908,427, filed on Sep. 30, 2019.
Prior Publication US 2022/0367605 A1, Nov. 17, 2022
Int. Cl. H10D 1/68 (2025.01); H01L 23/522 (2006.01)
CPC H10D 1/684 (2025.01) [H01L 23/5223 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
depositing a first passivation layer over a substrate including one or more semiconductor devices;
forming a metal-insulator-metal (MIM) capacitor over the first passivation layer; and
forming a second passivation layer over the MIM capacitor, wherein the forming the second passivation layer includes:
depositing a first dielectric portion of the second passivation layer over the MIM capacitor;
forming a stress-reduction feature of the second passivation layer over the first dielectric portion, wherein the forming the stress-reduction feature includes depositing a first nitrogen-containing layer over the first dielectric portion, depositing an oxygen-containing layer over the first nitrogen-containing layer and depositing a second nitrogen-containing layer over the oxygen-containing layer; and
depositing a second dielectric portion of the second passivation layer over the stress-reduction feature;
wherein the first nitrogen-containing layer has a first thickness, wherein the oxygen-containing layer has a second thickness, wherein the second nitrogen- containing layer has a third thickness, and wherein the second thickness is less than each of the first thickness and the third thickness.