US 12,387,926 B2
Selective film formation using self-assembled monolayer
Zeyuan Ni, Yamanashi (JP); Yumiko Kawano, Yamanashi (JP); Shuji Azumo, Yamanashi (JP); Taiki Kato, Yamanashi (JP); and Shinichi Ike, Hwaseong-si (KR)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Appl. No. 18/245,550
Filed by Tokyo Electron Limited, Tokyo (JP)
PCT Filed Sep. 6, 2021, PCT No. PCT/JP2021/032609
§ 371(c)(1), (2) Date Mar. 16, 2023,
PCT Pub. No. WO2022/059538, PCT Pub. Date Mar. 24, 2022.
Claims priority of application No. 2020-156666 (JP), filed on Sep. 17, 2020.
Prior Publication US 2023/0369041 A1, Nov. 16, 2023
Int. Cl. H01L 21/02 (2006.01)
CPC H01L 21/0214 (2013.01) [H01L 21/02164 (2013.01); H01L 21/02499 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A film formation method comprising:
preparing a substrate in which a first insulating film and a first metal film are formed, wherein a surface of the substrate includes a first region from which the first insulating film is exposed and a second region from which the first metal film is exposed;
forming a self-assembled monolayer on the first metal film in the second region by supplying, as a raw material of the self-assembled monolayer, an organic compound containing a nitro group in a head group to the surface of the substrate, and selectively adsorbing the organic compound to the second region among the first region and the second region; and
forming a second insulating film on the first insulating film in the first region by supplying a raw material gas as a raw material of the second insulating film to the surface of the substrate while formation of the second insulating film in the second region is inhibited by the self-assembled monolayer.