US 12,387,908 B2
Plasma treatment apparatus
Tatsuo Matsudo, Nirasaki (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Appl. No. 18/036,106
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
PCT Filed Nov. 8, 2021, PCT No. PCT/JP2021/041007
§ 371(c)(1), (2) Date May 9, 2023,
PCT Pub. No. WO2022/107631, PCT Pub. Date May 27, 2022.
Claims priority of application No. 2020-191877 (JP), filed on Nov. 18, 2020.
Prior Publication US 2023/0411118 A1, Dec. 21, 2023
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32174 (2013.01) [H01J 37/32449 (2013.01); H01J 37/32568 (2013.01); H01J 37/32816 (2013.01); H01J 2237/332 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A plasma processing apparatus comprising:
a chamber;
a gas supply configured to supply gas into the chamber;
a substrate support provided in the chamber;
a ground electrode electrically grounded and provided in the chamber;
an upper electrode provided above the substrate support and the ground electrode;
a first high-frequency power supply electrically connected to the upper electrode, the first high-frequency power supply configured to generate a plasma from the gas in the chamber;
a second high-frequency power supply electrically connected to the upper electrode; and
a rectifier configured to block application of a negative voltage to the upper electrode by the second high-frequency power supply,
wherein the rectifier includes a diode, and
a cathode of the diode is connected to a feed line connected between the second high-frequency power supply and the upper electrode, and an anode of the diode is connected to ground.