US 12,387,680 B2
Display apparatus, its operating method, and electronic device
Susumu Kawashima, Kanagawa (JP); Koji Kusunoki, Kanagawa (JP); Kazunori Watanabe, Tokyo (JP); and Satoshi Yoshimoto, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP)
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
Filed on May 6, 2024, as Appl. No. 18/655,975.
Application 18/655,975 is a continuation of application No. 18/018,051, granted, now 11,984,064, previously published as PCT/IB2021/056949, filed on Jul. 30, 2021.
Claims priority of application No. 2020-136207 (JP), filed on Aug. 12, 2020.
Prior Publication US 2024/0290252 A1, Aug. 29, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G09G 3/3233 (2016.01); G09G 3/32 (2016.01); H10K 59/131 (2023.01)
CPC G09G 3/3233 (2013.01) [G09G 3/32 (2013.01); H10K 59/131 (2023.02); G09G 2300/0819 (2013.01); G09G 2300/0842 (2013.01); G09G 2310/02 (2013.01); G09G 2310/08 (2013.01); G09G 2330/021 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A display apparatus comprising a pixel, the pixel comprising:
a first transistor;
a second transistor;
a third transistor;
a fourth transistor;
a capacitor; and
a light-emitting device,
wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor and one electrode of the capacitor,
wherein the other of the source and the drain of the second transistor is electrically connected to one of a source and a drain of the third transistor and a gate of the fourth transistor,
wherein one of a source and a drain of the fourth transistor is electrically connected to the other electrode of the capacitor,
wherein the other of the source and the drain of the fourth transistor is electrically connected to the light-emitting device,
wherein each of the first transistor and the third transistor comprises a first material in a channel formation region,
wherein the fourth transistor comprises a second material in a channel formation region, and
wherein the first material is different from the second material.