| CPC G01R 31/2884 (2013.01) [G01R 31/2853 (2013.01); G01R 31/2896 (2013.01)] | 14 Claims |
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1. A semiconductor device comprising:
a first semiconductor chip which includes a first internal circuit, a plurality of first flip-flop circuits connected to the first internal circuit, a plurality of first selectors, and a plurality of first electrodes connected to respective outputs of the plurality of first selectors;
a plurality of first connection conductors; and
a second semiconductor chip which includes a plurality of second electrodes respectively connected to the plurality of first electrodes via the plurality of first connection conductors and a second internal circuit connected to at least one of the plurality of second electrodes,
wherein at least one of the first semiconductor chip and the second semiconductor chip includes a part of a test circuit unit,
wherein the test circuit unit includes a first detection circuit which receives a signal from each of the plurality of second electrodes, a first selector control circuit which controls the plurality of first selectors, a first expected value generation circuit which generates a first expected value signal including a first expected value, and a test circuit which receives an output of the first detection circuit, and
wherein each of the plurality of first selectors includes a first signal input which receives a signal from any one of the plurality of first flip-flop circuits and a first expected value input which receives the first expected value signal from the first expected value generation circuit.
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