US 12,385,139 B2
Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
Daisuke Hara, Toyama (JP); Takashi Yahata, Toyama (JP); Kenji Shinozaki, Toyama (JP); and Kazuhiko Yamazaki, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Sep. 4, 2020, as Appl. No. 17/012,867.
Application 17/012,867 is a continuation of application No. PCT/JP2019/009657, filed on Mar. 11, 2019.
Claims priority of application No. 2018-054663 (JP), filed on Mar. 22, 2018.
Prior Publication US 2020/0399757 A1, Dec. 24, 2020
Int. Cl. C23C 16/52 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01)
CPC C23C 16/52 (2013.01) [C23C 16/45525 (2013.01); C23C 16/45557 (2013.01); H01L 21/0228 (2013.01); H01L 21/67017 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A substrate processing apparatus comprising:
a process chamber in which a substrate is processed;
a first gas supply system configured to supply a first gas onto the substrate in the process chamber and comprising: a first tank and a second tank configured to store and heat the first gas therein, wherein volumes of the first tank and the second tank are equal to each other; and a third tank configured to store and heat the first gas therein, wherein a volume of the third tank is smaller than those of the first tank and the second tank; and
a controller configured to control the first gas supply system such that the first gas is supplied onto the substrate in the process chamber while switching among the first tank, the second tank, and the third tank.