US 12,385,135 B2
Semiconductor manufacturing apparatus, method of manufacturing semiconductor device and method of film formation
Fumiki Aiso, Kuwana (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Mar. 14, 2022, as Appl. No. 17/693,660.
Claims priority of application No. 2021-153476 (JP), filed on Sep. 21, 2021.
Prior Publication US 2023/0091037 A1, Mar. 23, 2023
Int. Cl. C23C 16/455 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01)
CPC C23C 16/45544 (2013.01) [C23C 16/45527 (2013.01); H01L 21/02178 (2013.01); H01L 21/0228 (2013.01); H01L 21/28568 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A semiconductor manufacturing apparatus comprising:
a chamber on which a substrate is placed;
a first gas flow path configured to supply a first processing gas into the chamber;
a second gas flow path configured to supply a second processing gas into the chamber;
a first replacement gas flow path configured to supply a first replacement gas into the chamber;
a replacement gas heating unit configured to heat the first replacement gas;
a second replacement gas flow path configured to supply a second replacement gas into the chamber; and
a replacement gas cooling unit configured to cool the second replacement gas, the replacement gas cooling unit including a pump configured to rapidly adiabatically expand a volume of the second replacement gas, the pump including:
a syringe,
a piston slidably arranged on an inner surface of the syringe,
a movable part screwed onto a shaft of the piston, and
a heat insulating material arranged so as to surround the syringe,
wherein the piston slides with respect to the syringe by a rotation of the movable part.