US 12,383,923 B2
Atomic layer deposition with plasma source
Vaino Kilpi, Espoo (FI); Wei-Min Li, Espoo (FI); Timo Malinen, Espoo (FI); Juhana Kostamo, Espoo (FI); and Sven Lindfors, Espoo (FI)
Assigned to Picosun Oy, Espoo (FI)
Filed by Picosun Oy, Espoo (FI)
Filed on Dec. 13, 2017, as Appl. No. 15/840,007.
Application 15/840,007 is a continuation of application No. 14/794,159, filed on Jul. 8, 2015, granted, now 9,868,131.
Application 14/794,159 is a continuation of application No. 14/009,647, granted, now 9,095,869, previously published as PCT/FI2011/050303, filed on Apr. 7, 2011.
Prior Publication US 2018/0099304 A1, Apr. 12, 2018
Int. Cl. B05C 5/00 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01)
CPC B05C 5/001 (2013.01) [C23C 16/403 (2013.01); C23C 16/45542 (2013.01); C23C 16/45544 (2013.01); C23C 16/45582 (2013.01); C23C 16/52 (2013.01); H01J 37/32357 (2013.01); H01J 37/32449 (2013.01); H01J 37/32743 (2013.01); H01J 37/32871 (2013.01); H01L 21/02274 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method comprising:
operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions;
loading at least one substrate into the reaction chamber via a transfer chamber, wherein the transfer chamber is between a remote plasma source and the reaction chamber;
guiding carrier gas from a carrier gas source to the remote plasma source along a carrier gas line implemented as a single gas line and providing plurality of three-way pulsing valves in the carrier gas line;
guiding a non-metal precursor through a capillary to an input of one of the three-way pulsing valves and pulsing the non-metal precursor in the three-way pulsing valve upstream of the remote plasma source into a carrier gas flow;
generating radicals from the non-metal precursor in the remote plasma source;
providing radicals from the remote plasma source as a top to bottom flow into the reaction chamber through a vertically-deformable in-feed part surrounded by the transfer chamber and providing a vacuum in the space between the transfer chamber and the vertically deformable in-feed part, wherein the vertically deformable in-feed part is fitted against a top of the reaction chamber, which is a sealed reaction chamber; and
providing a metal precursor into the reaction chamber from the side of the reaction chamber.