US 12,057,465 B2
Superlattice-based detector systems and methods
Edward K. Huang, Thousand Oaks, CA (US)
Assigned to Teledyne FLIR Commercial Systems, Inc., Goleta, CA (US)
Filed by Teledyne FLIR Commercial Systems, Inc., Goleta, CA (US)
Filed on Jun. 10, 2021, as Appl. No. 17/344,210.
Application 17/344,210 is a continuation of application No. PCT/US2019/063676, filed on Nov. 27, 2019.
Claims priority of provisional application 62/779,900, filed on Dec. 14, 2018.
Prior Publication US 2021/0305307 A1, Sep. 30, 2021
Int. Cl. H01L 27/146 (2006.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01); H01L 31/18 (2006.01)
CPC H01L 27/14652 (2013.01) [H01L 27/14694 (2013.01); H01L 31/03046 (2013.01); H01L 31/035263 (2013.01); H01L 31/1844 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An infrared detector comprising:
a first superlattice structure comprising a first plurality of periods, wherein each of the first plurality of periods comprises:
a first sub-layer comprising a first semiconductor material; and
a second sub-layer adjacent to the first sub-layer, wherein the second sub-layer comprises a second semiconductor material; and
a second superlattice structure disposed on the first superlattice structure, wherein the second superlattice structure comprises a second plurality of periods, and wherein each of the second plurality of periods comprises:
a third sub-layer comprising a third semiconductor material; and
a fourth sub-layer adjacent to the third sub-layer, wherein the fourth sub-layer comprises a fourth semiconductor material,
wherein the second plurality of periods is associated with a wider bandgap than the first plurality of periods, and wherein a p-n junction is formed at an interface within the second superlattice structure or at an interface between the first and second superlattice structures.