US 12,382,839 B2
Magnetic tunneling junction device and memory device including the same
Kwangseok Kim, Seoul (KR); Kiwoong Kim, Hwaseong-si (KR); Jeongchun Ryu, Hwaseong-si (KR); and Seonggeon Park, Seongnam-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jun. 22, 2022, as Appl. No. 17/847,103.
Claims priority of application No. 10-2022-0002960 (KR), filed on Jan. 7, 2022; and application No. 10-2022-0073058 (KR), filed on Jun. 15, 2022.
Prior Publication US 2023/0225219 A1, Jul. 13, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 11/16 (2006.01); G01R 33/09 (2006.01); H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/10 (2023.02) [G01R 33/098 (2013.01); G11C 11/161 (2013.01); H01F 10/3272 (2013.01); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 31 Claims
OG exemplary drawing
 
1. A magnetic tunneling junction device comprising:
a pinned layer having a first surface and a second surface opposite the first surface;
a seed layer contacting the first surface of the pinned layer;
a free layer facing the second surface of the pinned layer;
a tunnel barrier layer between the pinned layer and the free layer; and
an anti-crystallized layer between the pinned layer and the tunnel barrier layer,
wherein
the seed layer comprises at least one amorphous material selected from CoFeX and CoFeXTa, and the X is an element selected from niobium (Nb), molybdenum (Mo), tungsten (W), chromium (Cr), and hafnium (Hf), and wherein
the anti-crystallized layer comprises at least one of YCoB, YFeB, or YCoFeB and the Y comprises at least one element selected from tungsten (W), rhenium (Re), molybdenum (Mo), and tantalum (Ta), or
the anti-crystallized layer comprises at least one of ReFe, ReCo, or ReCoFe.