US 12,382,837 B2
Method for characterizing magnetic device
I Cheng Chang, Hsinchu (TW); and Tsann Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jul. 16, 2021, as Appl. No. 17/377,849.
Prior Publication US 2023/0019001 A1, Jan. 19, 2023
Int. Cl. H10N 50/01 (2023.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01)
CPC H10N 50/01 (2023.02) [H10B 61/00 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method for characterizing a magnetic property of a target layer, comprising:
providing a first sample having a first structure;
providing a second sample having a target layer over the first structure;
obtaining a first magnetic property of the first sample;
obtaining a second magnetic property of the second sample, wherein at least two magnetic fields perpendicular to a surface of the target layer is applied on the target layer sequentially, and the at least two magnetic fields perpendicular to the surface of the target layer having different ranges of magnetic field strength;
deriving a third magnetic property of the target layer according to the first magnetic property and the second magnetic property; and
identifying a spin-flop strength (HSF) and an antiparallel-coupling strength (HAPC) of the target layer, wherein the antiparallel-coupling strength is greater than a coercivity of a hard-bias layer (HC_HBL) in the target layer,
wherein a magnetization of the hard-bias layer and a magnetization of a reference layer in the target layer spin flopped simultaneously when a magnetic field strength of the magnetic fields increased to exceed the spin-flop strength.