US 12,382,817 B2
Display panel and mobile terminal
Jia Tang, Shenzhen (CN)
Assigned to SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD., Guangdong (CN)
Appl. No. 17/610,505
Filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen (CN)
PCT Filed Sep. 27, 2021, PCT No. PCT/CN2021/120888
§ 371(c)(1), (2) Date Nov. 11, 2021,
PCT Pub. No. WO2023/039937, PCT Pub. Date Mar. 23, 2023.
Claims priority of application No. 202111092019.X (CN), filed on Sep. 17, 2021.
Prior Publication US 2024/0251632 A1, Jul. 25, 2024
Int. Cl. H10K 59/123 (2023.01); H10K 59/80 (2023.01)
CPC H10K 59/80518 (2023.02) [H10K 59/80517 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A display panel, comprising:
a substrate;
an anode reflection layer on the substrate, wherein the anode reflection layer comprises a plurality of anode reflection portions;
an anode layer on the anode reflection layer, wherein the anode layer comprises a plurality of anode portions corresponding to the plurality of anode reflection portions; each of the anode portions is electrically connected to a corresponding anode reflection portion;
a light-emitting layer on the anode layer, wherein the light-emitting layer comprises a plurality of light-emitting portions corresponding to the plurality of anode portions one to one;
each of the light-emitting portions is electrically connected to a corresponding anode portion;
an auxiliary layer between the anode reflection layer and the anode layer, wherein a thickness of the auxiliary layer is greater than or equal to a first threshold value, and a projection of the auxiliary layer on the anode layer covers the plurality of anode portions and a region between the two adjacent anode portions;
wherein the auxiliary layer is provided with a plurality of first via holes corresponding to the plurality of anode portions, a constituent material of the auxiliary layer includes an insulating material, and each of the anode portions is electrically connected to a corresponding thin film transistor through a corresponding first via hole, and
wherein a sum of the thickness of the auxiliary layer and a thickness of the anode layer is greater than or equal to 600 angstroms.