US 12,382,799 B2
Display device and method of fabricating the same
Seul Ki Kim, Incheon (KR); Kap Soo Yoon, Seoul (KR); Jae Hyun Lee, Gwacheon-si (KR); Seung Ha Choi, Hwaseong-si (KR); and Jong Bum Choi, Hwaseong-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed by Samsung Display Co., Ltd., Yongin-si (KR)
Filed on Jun. 2, 2022, as Appl. No. 17/831,387.
Claims priority of application No. 10-2021-0104976 (KR), filed on Aug. 10, 2021.
Prior Publication US 2023/0053184 A1, Feb. 16, 2023
Int. Cl. H10K 59/131 (2023.01); H10K 71/00 (2023.01); H10K 59/12 (2023.01); H10K 59/126 (2023.01)
CPC H10K 59/131 (2023.02) [H10K 71/00 (2023.02); H10K 59/1201 (2023.02); H10K 59/126 (2023.02)] 26 Claims
OG exemplary drawing
 
1. A display device comprising:
a light-blocking layer disposed on a substrate;
a buffer layer disposed on the light-blocking layer;
a semiconductor layer disposed on the buffer layer;
a gate insulating layer disposed on the semiconductor layer;
a connection pattern layer and a gate electrode disposed on the gate insulating layer and spaced apart from each other;
an interlayer dielectric layer disposed on the connection pattern layer and the gate electrode;
a via layer disposed on the interlayer dielectric layer;
a first bridge layer and a second bridge layer disposed on the via layer;
a pixel electrode disposed on the second bridge layer;
a light-emitting layer disposed on the pixel electrode; and
a common electrode disposed on the light-emitting layer,
wherein:
a first end of the first bridge layer is connected to the light-blocking layer through the connection pattern layer, and a second end of the first bridge layer is connected to the semiconductor layer,
the second bridge layer connects the semiconductor layer with the pixel electrode, and
a portion of the pixel electrode is directly disposed on and directly contacts the via layer.