US 12,382,767 B2
Light emitting diode structure having resonant cavity and method for manufacturing the same
Wing Cheung Chong, Hong Kong (CN)
Assigned to Raysolve Optoelectronics (Suzhou) Company Limited, Suzhou (CN)
Filed by Raysolve Optoelectronics (Suzhou) Company Limited, Suzhou (CN)
Filed on Mar. 12, 2024, as Appl. No. 18/602,704.
Application 18/602,704 is a division of application No. 17/209,658, filed on Mar. 23, 2021, granted, now 11,984,541.
Claims priority of provisional application 63/009,995, filed on Apr. 14, 2020.
Prior Publication US 2024/0258466 A1, Aug. 1, 2024
Int. Cl. H10H 20/80 (2025.01); H10H 20/01 (2025.01); H10H 20/812 (2025.01)
CPC H10H 20/862 (2025.01) [H10H 20/0137 (2025.01); H10H 20/812 (2025.01); H10H 20/0363 (2025.01)] 16 Claims
OG exemplary drawing
 
1. A method for manufacturing a light emitting diode (LED) structure, comprising:
forming a first reflector layer and a semiconductor structure on a first substrate;
performing an implantation operation to form an isolation material surrounding at least one optical cavity in the semiconductor structure; and
forming a second reflector layer on the semiconductor structure,
wherein the first reflector layer, each optical cavity and the second reflector layer are configured to collectively provide a resonant cavity,
wherein forming the first reflector layer and the semiconductor structure comprises:
forming a second doping type semiconductor layer on a second substrate;
forming a multiple quantum well (MQW) layer on the second doping type semiconductor layer;
forming a first doping type semiconductor layer on the MQW layer;
forming the first reflector layer on the first doping type semiconductor layer;
bonding the first reflector layer to the first substrate; and
removing the second substrate.