US 12,382,732 B2
Passivated photodiode comprising a ferroelectric peripheral portion
Abdelkader Aliane, Grenoble (FR); and Hacile Kaya, Grenoble (FR)
Assigned to Commissariat à l'Energie Atomique et aux Energies Alternatives, Paris (FR)
Filed by Commissariat à l'Energie Atomique et aux Energies Alternatives, Paris (FR)
Filed on Sep. 17, 2021, as Appl. No. 17/447,972.
Claims priority of application No. 20 09529 (FR), filed on Sep. 21, 2020.
Prior Publication US 2022/0093812 A1, Mar. 24, 2022
Int. Cl. H10F 30/223 (2025.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01); H10F 71/00 (2025.01)
CPC H10F 30/223 (2025.01) [H10F 39/014 (2025.01); H10F 39/184 (2025.01); H10F 71/00 (2025.01)] 8 Claims
OG exemplary drawing
 
1. A photodiode, having a first surface and a second surface that are opposite one another and parallel to a main plane, comprising:
a detection portion, made of a semiconductor material, comprising:
a first region that is doped with a first conductivity type and is flush with the first surface, and is configured to be electrically biased;
a second region that is doped with a second conductivity type opposite the first type, and is flush with the second surface; and
an intermediate region, located between the first region and the second region;
a dielectric layer, covering the detection portion on the first surface and coming into contact with the first region;
a semiconductor peripheral portion made of a semiconductor material doped with the second conductivity type, configured to be electrically biased, and surrounding the detection portion in the main plane and coming into contact with the second region; and
a ferroelectric peripheral portion, made of a ferroelectric material,
located between and in contact with the intermediate region and the dielectric layer, and
located between the first region and the semiconductor peripheral portion and surrounding the first region in the main plane.