US 12,382,726 B2
Capacitor structures
Vladimir Mikhalev, Boise, ID (US); and Michael P. Violette, Boise, ID (US)
Assigned to Lodestar Licensing Group LLC, Evanston, IL (US)
Filed by Lodestar Licensing Group LLC, Evanston, IL (US)
Filed on Feb. 12, 2024, as Appl. No. 18/439,676.
Application 18/439,676 is a continuation of application No. 18/096,222, filed on Jan. 12, 2023, granted, now 11,935,883.
Application 18/096,222 is a continuation of application No. 17/358,251, filed on Jun. 25, 2021, granted, now 11,569,221, issued on Jan. 31, 2023.
Application 17/358,251 is a continuation of application No. 16/454,908, filed on Jun. 27, 2019, granted, now 11,063,034, issued on Jul. 13, 2021.
Prior Publication US 2024/0186313 A1, Jun. 6, 2024
Int. Cl. H10D 89/60 (2025.01); G11C 7/24 (2006.01); G11C 16/04 (2006.01); G11C 16/30 (2006.01); H01L 23/60 (2006.01); H01L 23/62 (2006.01); H10B 41/20 (2023.01); H10B 41/40 (2023.01); H10B 43/20 (2023.01); H10B 43/40 (2023.01); H10D 1/68 (2025.01); H10D 8/25 (2025.01); H10D 62/83 (2025.01); H10D 64/62 (2025.01)
CPC H10D 89/60 (2025.01) [G11C 7/24 (2013.01); G11C 16/0483 (2013.01); G11C 16/30 (2013.01); H01L 23/60 (2013.01); H01L 23/62 (2013.01); H10B 41/20 (2023.02); H10B 41/40 (2023.02); H10B 43/20 (2023.02); H10B 43/40 (2023.02); H10D 1/692 (2025.01); H10D 8/25 (2025.01); H10D 62/83 (2025.01); H10D 64/62 (2025.01); H10D 89/921 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A capacitor structure, comprising:
a first conductive region having a first conductivity type, the first conductive region comprising a first protrusion portion and a second protrusion portion;
a second conductive region having a second conductivity type different than the first conductivity type, the second conductive region comprising a third protrusion portion;
a first dielectric material overlying the first protrusion portion of the first conductive region;
a first conductor material overlying the first dielectric material; and
a terminal of a diode overlying the second protrusion portion of the first conductive region and the third protrusion portion of the second conductive region, the terminal of the diode comprising a second conductor material isolated from the first conductor material.