US 12,382,709 B2
Semiconductor device structure and method for forming the same
Shih-Chuan Chiu, Hsinchu (TW); Jia-Chuan You, Taoyuan (TW); Chia-Hao Chang, Hsinchu (TW); Chun-Yuan Chen, HsinChu (TW); Tien-Lu Lin, Hsinchu (TW); Yu-Ming Lin, Hsinchu (TW); and Chih-Hao Wang, Baoshan Township, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jan. 5, 2024, as Appl. No. 18/405,040.
Application 17/750,895 is a division of application No. 16/440,210, filed on Jun. 13, 2019, granted, now 11,342,229, issued on May 24, 2022.
Application 18/405,040 is a continuation of application No. 17/750,895, filed on May 23, 2022, granted, now 11,901,238.
Prior Publication US 2024/0162094 A1, May 16, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01)
CPC H10D 84/038 (2025.01) [H01L 21/76829 (2013.01); H01L 21/76897 (2013.01); H01L 23/5226 (2013.01); H10D 30/024 (2025.01); H10D 30/62 (2025.01); H10D 62/115 (2025.01); H10D 84/0149 (2025.01); H10D 84/0151 (2025.01); H10D 84/0158 (2025.01); H10D 84/834 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a substrate;
a conductive feature on the substrate; and
an electrical connection structure on the conductive feature, wherein the electrical connection structure comprises:
a first grain made of a first metal material; and
a second metal material extending vertically along a first side of a grain boundary of the first grain and laterally along a bottom of the grain boundary of the first grain, wherein the second metal material is different than the first metal material.
 
9. A semiconductor device structure, comprising:
a transistor over a substrate;
a contact plug on a source/drain feature of the transistor;
a via on the contact plug, wherein the via comprises:
a plurality of grains made of a first metal material; and
a second metal material including a first portion laterally sandwiched between a first grain and a second grain of the plurality of grains and a second portion vertically sandwiched between the first grain and a third grain of the plurality of grains, wherein the second metal material is different than the first metal material.
 
14. A semiconductor device structure, comprising:
a substrate;
a conductive feature on the substrate; and
an electrical connection structure on the conductive feature, wherein the electrical connection structure includes a first grain of a first metal material and a first portion of a second metal material interfaced with a first grain boundary of the first grain of the first metal material, wherein the first portion of the second metal material includes an upper part higher than a top surface of the conductive feature and a lower part lower than the top surface of the conductive feature.