US 12,382,687 B2
Semiconductor device including insulating layers and method of manufacturing the same
Dong Kak Lee, Suwon-si (KR); Min Woo Kim, Suwon-si (KR); Bong Hyun Kim, Suwon-si (KR); Hee Young Park, Suwon-si (KR); Seo Jin Ahn, Suwon-si (KR); and Won Yong Lee, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Feb. 15, 2023, as Appl. No. 18/169,327.
Application 18/169,327 is a continuation of application No. 16/353,750, filed on Mar. 14, 2019, granted, now 11,605,714.
Claims priority of application No. 10-2018-0106106 (KR), filed on Sep. 5, 2018.
Prior Publication US 2023/0197789 A1, Jun. 22, 2023
Int. Cl. H01L 29/40 (2006.01); H01L 21/762 (2006.01); H10B 12/00 (2023.01); H10D 62/17 (2025.01)
CPC H10D 62/371 (2025.01) [H01L 21/76224 (2013.01); H10B 12/34 (2023.02); H10B 12/31 (2023.02)] 16 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a trench defining an active region in a substrate;
a first insulating layer on a bottom surface and side surfaces of the active region inside the trench;
a shielding layer arranged on a surface of the first insulating layer and exposing a portion of the surface of the first insulating layer;
a second insulating layer arranged on the shielding layer and contacting the exposed portion of the surface of the first insulating layer along the bottom surface and the side surfaces of the active region inside the trench; and
a gap-fill insulating layer on the second insulating layer and being separated from the first insulating layer by the second insulating layer, such that the gap-fill insulating layer does not directly contact the first insulating layer,
wherein the first insulating layer includes at least one protrusion that protrudes over the surface of the first insulating layer and that contacts the second insulating layer.