US 12,382,684 B2
Device having multiple emitter layers
Mattias Dahlstrom, Los Altos, CA (US); Thomas James Moutinho, Gorham, ME (US); Craig Printy, Buxton, ME (US); Wibo Van Noort, Scarborough, ME (US); and Tatsuya Tominari, Plano, TX (US)
Assigned to TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed by TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed on Sep. 20, 2021, as Appl. No. 17/479,638.
Claims priority of provisional application 63/080,872, filed on Sep. 21, 2020.
Prior Publication US 2022/0093736 A1, Mar. 24, 2022
Int. Cl. H10D 62/13 (2025.01); H10D 10/01 (2025.01); H10D 10/40 (2025.01)
CPC H10D 62/133 (2025.01) [H10D 10/01 (2025.01); H10D 10/40 (2025.01)] 24 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device, the method comprising:
forming a first semiconductor layer with a first doping concentration of a first doping type;
forming a second semiconductor layer directly on the first semiconductor layer, the second semiconductor layer with a second doping concentration of the first doping type, wherein the second doping concentration is greater than the first doping concentration, and wherein:
the first semiconductor layer is formed at a first growth temperature; and
the second semiconductor layer is formed at a second growth temperature less than the first growth temperature;
forming a metal layer on the second semiconductor layer; and
forming a contact between the second semiconductor layer and the metal layer by applying a heat treatment.