US 12,382,671 B2
Semiconductor structure and manufacturing method for the semiconductor structure
Chun-Yen Peng, Hsinchu (TW); Chih-Yu Chang, New Taipei (TW); Bo-Feng Young, Taipei (TW); Te-Yang Lai, Hsinchu (TW); Sai-Hooi Yeong, Hsinchu County (TW); and Chi On Chui, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jul. 28, 2023, as Appl. No. 18/360,804.
Application 17/676,695 is a division of application No. 16/799,215, filed on Feb. 24, 2020, granted, now 11,257,950, issued on Feb. 22, 2022.
Application 18/360,804 is a continuation of application No. 17/676,695, filed on Feb. 21, 2022, granted, now 11,777,031.
Prior Publication US 2023/0387298 A1, Nov. 30, 2023
Int. Cl. H10D 64/68 (2025.01); H01L 21/02 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/69 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01)
CPC H10D 30/701 (2025.01) [H01L 21/02181 (2013.01); H01L 21/0228 (2013.01); H01L 21/02356 (2013.01); H10D 30/024 (2025.01); H10D 30/0415 (2025.01); H10D 30/62 (2025.01); H10D 30/791 (2025.01); H10D 62/121 (2025.01); H10D 64/017 (2025.01); H10D 64/689 (2025.01); H10D 64/691 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a metal gate layer over a substrate; and
a channel between a source region and a drain region in the substrate;
a ferroelectric layer, disposed between the metal gate layer and the substrate, wherein the ferroelectric layer comprises hafnium oxide-based material, wherein the ferroelectric layer is configured to cause a strain in the channel when applied with an electric field, the hafnium oxide-based material comprises:
a first portion of hafnium oxide with orthorhombic phase, a second portion of hafnium oxide with monoclinic phase, and a third portion of the hafnium oxide with tetragonal phase.