US 12,382,670 B2
Thin film structure and semiconductor device comprising the same
Dukhyun Choe, Suwon-si (KR); Hyangsook Lee, Suwon-si (KR); Junghwa Kim, Yongin-si (KR); Eunha Lee, Seoul (KR); Sanghyun Jo, Seoul (KR); and Jinseong Heo, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Aug. 27, 2021, as Appl. No. 17/459,529.
Claims priority of application No. 10-2020-0146371 (KR), filed on Nov. 4, 2020; and application No. 10-2021-0035345 (KR), filed on Mar. 18, 2021.
Prior Publication US 2022/0140147 A1, May 5, 2022
Int. Cl. H10D 62/40 (2025.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 30/69 (2025.01); H10D 64/68 (2025.01)
CPC H10D 30/701 (2025.01) [H10D 30/0415 (2025.01); H10D 30/67 (2025.01); H10D 62/40 (2025.01); H10D 64/689 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A thin film structure comprising:
a substrate; and
a material layer having a fluorite structure, the material layer on the substrate and comprising crystals of which a <112> crystal orientation is aligned in a direction normal to a surface of the substrate, the material layer comprising a material expressed by MO2X8 (where M is Hf, Zr or combinations of Hf and Zr, and X is an element selected from the group including O, N, and H, and 0≤δ≤1), the material layer having a ratio of the element X inside the material layer different from a ratio of the element X in one or more surface layers of the material layer.