US 12,382,669 B2
Manufacturing method of semiconductor device including mulitple oxides
Shunpei Yamazaki, Tokyo (JP); Naoki Okuno, Kanagawa (JP); Tetsuya Kakehata, Kanagawa (JP); Hiroki Komagata, Kanagawa (JP); and Yuji Egi, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
Filed on Mar. 22, 2024, as Appl. No. 18/613,772.
Application 18/613,772 is a continuation of application No. 17/979,807, filed on Nov. 3, 2022, granted, now 11,942,370.
Application 17/979,807 is a continuation of application No. 17/271,716, granted, now 11,508,850, issued on Nov. 22, 2022, previously published as PCT/IB2019/057308, filed on Aug. 30, 2019.
Claims priority of application No. 2018-166318 (JP), filed on Sep. 5, 2018.
Prior Publication US 2024/0266222 A1, Aug. 8, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10D 30/67 (2025.01); H01L 21/02 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 99/00 (2025.01); H10D 30/01 (2025.01)
CPC H10D 30/6757 (2025.01) [H01L 21/02274 (2013.01); H01L 21/0228 (2013.01); H01L 21/02565 (2013.01); H10D 30/67 (2025.01); H10D 84/0128 (2025.01); H10D 84/038 (2025.01); H10D 99/00 (2025.01); H10D 30/031 (2025.01)] 11 Claims
OG exemplary drawing
 
1. A manufacturing method of a semiconductor device comprising a first conductor, first and second insulators, and first to third oxides, comprising the steps of:
forming the first oxide over a substrate;
forming the second oxide over the first oxide;
depositing the first insulator over the second oxide;
forming an opening reaching the first oxide in the first insulator and the second oxide;
depositing a first oxide film in contact with the first oxide, the second oxide, and the first insulator in the opening;
depositing a first insulating film over the first oxide film by a PEALD method;
depositing a first conductive film over the first insulating film; and
removing part of the first oxide film, part of the first insulating film, and part of the first conductive film until a top surface of the first insulator is exposed to form the third oxide, the second insulator, and the first conductor,
wherein the second oxide does not overlap with the third oxide, the second insulator, and the first conductor.