US 12,382,667 B2
Thin film transistor having dual active layers with dual channel portions and display device comprising the same
Dohyung Lee, Paju-si (KR); HongRak Choi, Paju-si (KR); and ChanYong Jeong, Paju-si (KR)
Assigned to LG Display Co., Ltd., Seoul (KR)
Filed by LG Display Co., Ltd., Seoul (KR)
Filed on Oct. 31, 2022, as Appl. No. 17/978,100.
Claims priority of application No. 10-2021-0152695 (KR), filed on Nov. 9, 2021.
Prior Publication US 2023/0146562 A1, May 11, 2023
Int. Cl. H10D 30/67 (2025.01); H10K 59/121 (2023.01); H10K 59/126 (2023.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01)
CPC H10D 30/6757 (2025.01) [H10K 59/1213 (2023.02); H10K 59/126 (2023.02); H10D 30/6723 (2025.01); H10D 30/6734 (2025.01); H10D 30/6755 (2025.01); H10D 86/423 (2025.01); H10D 86/60 (2025.01)] 25 Claims
OG exemplary drawing
 
1. A thin film transistor comprising:
a first gate electrode and a second gate electrode which overlap each other, and are spaced apart from each other in a thickness direction of the thin film transistor; and
an active layer disposed between the first gate electrode and the second gate electrode, the active layer comprising a first active layer and a second active layer,
wherein the active layer includes:
a channel portion;
a first connection portion that is in contact with one side of the channel portion; and
a second connection portion that is in contact with another side of the channel portion,
wherein the channel portion includes a first channel portion and a second channel portion, which are disposed side-by-side in plan view, each of the first channel portion and the second channel portion extend from the first connection portion to the second connection portion,
the first channel portion overlaps with the first gate electrode and with the second gate electrode,
the second channel portion overlaps with the second gate electrode, and
the second active layer is disposed in the first channel portion and the second channel portion, and
the first active layer is made of a material having a mobility lower than a mobility of a material of the second active layer, and is not disposed in at least a portion of the second channel portion.