US 12,382,661 B2
Thin-film transistor, display panel, and electronic device
Xi Cheng, Guangdong (CN)
Assigned to TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Guangdong (CN)
Appl. No. 17/593,890
Filed by TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Guangdong (CN)
PCT Filed Jul. 9, 2021, PCT No. PCT/CN2021/105453
§ 371(c)(1), (2) Date Sep. 27, 2021,
PCT Pub. No. WO2022/267104, PCT Pub. Date Dec. 29, 2022.
Claims priority of application No. 202110696721.0 (CN), filed on Jun. 23, 2021.
Prior Publication US 2024/0047544 A1, Feb. 8, 2024
Int. Cl. H10D 30/67 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01)
CPC H10D 30/673 (2025.01) [H10D 30/6729 (2025.01); H10D 30/6757 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10D 86/441 (2025.01)] 9 Claims
OG exemplary drawing
 
1. A thin-film transistor, comprising a gate, a gate insulating layer, and a semiconductor layer sequentially disposed from an inside to an outside along a radial direction;
wherein the thin-film transistor further comprises a source and a drain disposed on a side of the semiconductor layer and arranged at intervals, and the source and the drain are connected to the semiconductor layer;
wherein the source and the drain are arranged at intervals along a circumferential direction of the gate, and the semiconductor layer is disposed between the source and the drain.