US 12,382,659 B2
Method for manufacturing trench MOSFET
Jinyong Cai, Hangzhou (CN)
Assigned to Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd., Hangzhou (CN)
Filed by Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd., Hangzhou (CN)
Filed on Mar. 14, 2023, as Appl. No. 18/183,789.
Claims priority of application No. 202211271251.4 (CN), filed on Oct. 18, 2022.
Prior Publication US 2024/0128370 A1, Apr. 18, 2024
Int. Cl. H10D 30/66 (2025.01); H10D 30/01 (2025.01); H10D 64/27 (2025.01)
CPC H10D 30/668 (2025.01) [H10D 30/0297 (2025.01); H10D 64/513 (2025.01)] 10 Claims
OG exemplary drawing
 
1. A method for manufacturing a trench metal oxide semiconductor field effect transistor (MOSFET), comprising:
forming a trench extending from an upper surface of an epitaxial layer of a first dopant type into the epitaxial layer;
forming a gate dielectric layer and a gate conductor located in the trench, wherein the gate dielectric layer covers an inner surface of the trench and isolates the gate conductor from the epitaxial layer;
forming a body region of a second dopant type located in the epitaxial layer, wherein the body region is adjacent to the trench;
forming a source region of the first dopant type located in the body region;
forming a first dielectric layer on the source region and the gate dielectric layer;
forming a contact hole extending through the first dielectric layer and the source region and extending into the body region;
forming a spacer on a side wall of the contact hole;
forming a body contact region of the second dopant type through the contact hole; and
forming a conductive channel filling the contact hole.