US 12,382,646 B2
Semiconductor device and method for manufacturing semiconductor device
Shingo Kabutoya, Kyoto (JP)
Assigned to KYOCERA Corporation, Kyoto (JP)
Appl. No. 17/910,046
Filed by KYOCERA Corporation, Kyoto (JP)
PCT Filed Apr. 22, 2021, PCT No. PCT/JP2021/016318
§ 371(c)(1), (2) Date Sep. 8, 2022,
PCT Pub. No. WO2021/215503, PCT Pub. Date Oct. 28, 2021.
Claims priority of application No. 2020-077274 (JP), filed on Apr. 24, 2020.
Prior Publication US 2023/0101385 A1, Mar. 30, 2023
Int. Cl. H10D 8/60 (2025.01); H10D 8/01 (2025.01)
CPC H10D 8/605 (2025.01) [H10D 8/051 (2025.01)] 5 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor layer comprising a trench;
an insulating film covering an inner surface of the trench;
a conductor embedded in the trench covered with the insulating film; and
a Schottky junction layer, a Schottky junction being formed by the Schottky junction layer and a region being part of a surface of the semiconductor layer and being adjacent to the trench, wherein
a surface of the conductor is located at an elevation lower than the surface of the semiconductor layer, and
a portion of the region of the surface of the semiconductor layer comprises a sloping portion, the sloping portion having an angle of slope that increases with increasing proximity to the insulating film.