US 12,382,641 B2
Spin logic device based on spin-charge conversion and spin logic array using the same
Jongill Hong, Seoul (KR); and Saeroonter Oh, Ansan (KR)
Assigned to INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY, Seoul (KR); and INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS, Ansan (KR)
Filed by INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY, Seoul (KR); and INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS, Ansan (KR)
Filed on Aug. 24, 2023, as Appl. No. 18/455,449.
Application 18/455,449 is a continuation of application No. 16/875,415, filed on May 15, 2020, granted, now 11,785,783.
Claims priority of application No. 10-2019-0057679 (KR), filed on May 17, 2019; application No. 10-2019-0099458 (KR), filed on Aug. 14, 2019; and application No. 10-2020-0005462 (KR), filed on Jan. 15, 2020.
Prior Publication US 2023/0403865 A1, Dec. 14, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 61/00 (2023.01); H01F 10/32 (2006.01); H03K 19/17728 (2020.01); H03K 19/18 (2006.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H10B 61/00 (2023.02) [H01F 10/3254 (2013.01); H01F 10/3272 (2013.01); H01F 10/3286 (2013.01); H01F 10/329 (2013.01); H03K 19/17728 (2013.01); H03K 19/18 (2013.01); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 9 Claims
OG exemplary drawing
 
1. A spin logic device comprising:
a first conversion node includes a spin current injection layer which is a non-magnetic insulating layer and injected with spin current according to an input source, and a spin-charge conversion layer which converts the spin current into a charge current and outputs the charge current,
wherein the first conversion node includes:
a first magnet layer having a predetermined magnetization direction and generating the spin current by the input source:
the spin current injection layer injecting the spin current determined according to the predetermined magnetization direction;
the spin-charge conversion layer converting the spin current into the charge current based on an inverse spin-Hall effect; and
a connector transmitting the charge current from the first conversion node to a second conversion node in which magnetization of a second magnet layer is switched by a write magnetic field and an effective electric field induced by the charge current to output the spin current.