US 12,382,639 B2
Three-dimensional memory device and method
TsuChing Yang, Hsinchu (TW); Hung-Chang Sun, Kaohsiung (TW); Kuo Chang Chiang, Hsinchu (TW); Sheng-Chih Lai, Hsinchu (TW); and Yu-Wei Jiang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Dec. 1, 2023, as Appl. No. 18/526,663.
Application 18/526,663 is a division of application No. 17/194,715, filed on Mar. 8, 2021, granted, now 11,856,781.
Claims priority of provisional application 63/055,032, filed on Jul. 22, 2020.
Prior Publication US 2024/0114690 A1, Apr. 4, 2024
Int. Cl. H10B 51/20 (2023.01); H10B 51/10 (2023.01); H10D 62/10 (2025.01)
CPC H10B 51/20 (2023.02) [H10B 51/10 (2023.02); H10D 62/115 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A memory device comprising:
a layer stack over a substrate, the layer stack comprising alternating layers of word lines (WLs) and a first dielectric material;
a second dielectric material embedded in the layer stack and extending vertically in the layer stack along a direction from an upper surface of the layer stack distal from the substrate to a lower surface of the layer stack facing the substrate;
a source line (SL) and a bit line (BL) in the second dielectric material and extending vertically through the layer stack;
a memory film between the layer stack and the second dielectric material; and
a channel layer between the memory film and the second dielectric material, wherein a first portion of the channel layer is disposed between the memory film and the SL, a second portion of the channel layer is disposed between the memory film and the BL, and a third portion of the channel layer is disposed laterally between the first portion of the channel layer and the second portion of the channel layer, wherein the first portion of the channel layer and the second portion of the channel layer comprise a crystalline channel material, and the third portion of the channel layer comprises an amorphous channel material.