US 12,382,637 B2
Microelectronic devices with lower recessed conductive structures and related methods
Anilkumar Chandolu, Boise, ID (US); and Indra V. Chary, Boise, ID (US)
Filed by Lodestar Licensing Group LLC, Evanston, IL (US)
Filed on Jun. 10, 2024, as Appl. No. 18/738,970.
Application 17/818,324 is a division of application No. 16/922,792, filed on Jul. 7, 2020, granted, now 11,444,099, issued on Sep. 13, 2022.
Application 18/738,970 is a continuation of application No. 17/818,324, filed on Aug. 8, 2022, granted, now 12,010,848.
Prior Publication US 2024/0334703 A1, Oct. 3, 2024
Int. Cl. H10B 43/27 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01)
CPC H10B 43/27 (2023.02) [H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
a stack structure comprising tiers arranged in a vertically repeated pattern, the tiers individually comprising at least one conductive structure and at least one insulative structure;
contact structures extending through the stack structure, the contact structures comprising at least one conductive material; and
at least one insulative material laterally adjacent the contact structures,
the at least one insulative material defining, in lower elevations of the stack structure, insulative extensions protruding horizontally outwardly, and
in the lower elevations of the stack structure, the at least one conductive structures of the stack structure defining lesser horizontal dimensions than a horizontal dimension defined by the at least one conductive structures immediately above the lower elevations of the stack structure.