US 12,382,633 B2
Microelectronic devices including a selectively removable cap dielectric material, methods of forming the microelectronic devices, and related systems
Frank Speetjens, Boise, ID (US); Yucheng Wang, Boise, ID (US); Brendan Flynn, Boise, ID (US); S M Istiaque Hossain, Boise, ID (US); Tom J. John, Boise, ID (US); and Jeremy Adams, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Apr. 26, 2022, as Appl. No. 17/660,767.
Prior Publication US 2023/0345721 A1, Oct. 26, 2023
Int. Cl. H10B 43/27 (2023.01)
CPC H10B 43/27 (2023.02) 20 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
tiers of alternating dielectric materials and conductive materials;
pillars extending vertically through the tiers; and
a cap oxide material vertically adjacent to the tiers, the cap oxide material formulated to exhibit a different etch rate relative to an etch rate of the dielectric materials of the tiers,
first sidewalls of the pillars and second sidewalls of the cap oxide material defining a step change between the cap oxide material and the tiers.