US 12,381,586 B2
Power RF switch
Kang Yoon Lee, Seoul (KR); Behnam Samadpoor Rikan, Suwon-si (KR); Young Gun Pu, Suwon-si (KR); and Jong Wan Jo, Suwon-si (KR)
Assigned to SKAIChips Co., Ltd., Suwon-si (KR); and Research & Business Foundation Sungkyunkwan University, Suwon-si (KR)
Filed by SKAIChips Co., Ltd., Suwon-si (KR); and Research & Business Foundation SUNGKYUNKWAN UNIVERSITY, Suwon-si (KR)
Filed on Nov. 10, 2022, as Appl. No. 17/985,095.
Claims priority of application No. 10-2021-0157073 (KR), filed on Nov. 15, 2021.
Prior Publication US 2023/0155613 A1, May 18, 2023
Int. Cl. H04B 1/04 (2006.01); H04B 1/00 (2006.01)
CPC H04B 1/0458 (2013.01) [H04B 1/006 (2013.01); H04B 2001/0416 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A power radio frequency (RF) switch comprising:
a transmission semiconductor switch having one end connected to an external antenna and the other end connected to an external transmission circuit, and switched by a transmission switching control signal;
a reception semiconductor switch having one end connected to an external antenna and the other end connected to an external reception circuit, and switched by a reception switching control signal;
a controller configured to output a switching control signal which indicates one connected switch of the transmission semiconductor switch and the reception semiconductor switch; and
a switching signal boosting circuit configured to output the transmission switching control signal and the reception switching control signal having opposite phases according to the switching control signal, wherein each of the transmission switching control signal and the reception switching control signal swings between a boosted supply voltage in which a system supply voltage is boosted and a negative supply voltage in which a polarity of the system supply voltage is inverted,
wherein the switching signal boosting circuit applies the transmission switching control signal which swings between the boosted supply voltage and the negative supply voltage to a gate of a transmission high-voltage transistor of the transmission semiconductor switch, applies a transmission substrate control signal synchronized with the transmission switching control signal to swing between the negative supply voltage and a reference voltage to a substrate of the transmission high-voltage transistor, applies the reception switching control signal having an opposite phase to the transmission switching control signal to a gate of a reception high-voltage transistor of the reception semiconductor switch, and applies a reception substrate control signal having an opposite phase to the transmission substrate control signal to a substrate of the reception high-voltage transistor.