US 12,381,182 B2
Direct bonding in microelectronic assemblies
Feras Eid, Chandler, AZ (US); Adel A. Elsherbini, Chandler, AZ (US); Aleksandar Aleksov, Chandler, AZ (US); Shawna M. Liff, Scottsdale, AZ (US); and Johanna M. Swan, Scottsdale, AZ (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Apr. 11, 2024, as Appl. No. 18/632,919.
Application 18/632,919 is a continuation of application No. 17/025,709, filed on Sep. 18, 2020, granted, now 11,990,448.
Prior Publication US 2024/0274576 A1, Aug. 15, 2024
Int. Cl. H01L 25/065 (2023.01); H01L 23/00 (2006.01)
CPC H01L 25/0655 (2013.01) [H01L 24/06 (2013.01); H01L 24/08 (2013.01); H01L 24/09 (2013.01); H01L 24/17 (2013.01); H01L 24/29 (2013.01); H01L 24/30 (2013.01); H01L 25/0652 (2013.01); H01L 25/0657 (2013.01); H01L 2224/08225 (2013.01); H01L 2224/09177 (2013.01); H01L 2224/81 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A microelectronic assembly, comprising:
a first microelectronic component; and
a second microelectronic component coupled to the first microelectronic component by a direct bonding region including metal contacts that are distributed non-uniformly, wherein:
the direct bonding region includes a first subregion with first metal contacts, a second subregion with second metal contacts, and an area of the first metal contacts is different than an area of the second metal contacts; and
the first subregion includes a first dielectric material, the second subregion includes a second dielectric material, and a material composition of the first dielectric material is different from a material composition of the second dielectric material.