US 12,381,172 B2
Semiconductor package and fabricating method thereof
Dae Hee Lee, Cheonan-si (KR); Tae-Ho Ko, Cheonan-si (KR); and Jun Woo Myung, Cheonan-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Apr. 11, 2022, as Appl. No. 17/717,291.
Claims priority of application No. 10-2021-0088503 (KR), filed on Jul. 6, 2021.
Prior Publication US 2023/0012399 A1, Jan. 12, 2023
Int. Cl. H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 25/10 (2006.01)
CPC H01L 24/20 (2013.01) [H01L 21/56 (2013.01); H01L 23/3114 (2013.01); H01L 23/3135 (2013.01); H01L 24/19 (2013.01); H01L 24/14 (2013.01); H01L 24/16 (2013.01); H01L 24/73 (2013.01); H01L 25/105 (2013.01); H01L 2224/14181 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/2101 (2013.01); H01L 2224/221 (2013.01); H01L 2224/73101 (2013.01); H01L 2225/1058 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor package comprising:
a first redistribution layer;
a first semiconductor chip including a first side and a second side, wherein the first side faces the first redistribution layer;
a first sealing material covering the second side of the first semiconductor chip and having a first filler content;
a second sealing material formed on the first sealing material and having a second filler content lower than the first filler content; and
a second redistribution layer disposed on the second sealing material,
wherein a first via hole penetrates the first sealing material and the second sealing material, wherein the first via hole has an uneven surface,
wherein the second redistribution layer includes the first via hole and a first via, and wherein the first via fills the first via hole,
wherein the first via hole includes a first region and a second region, wherein the first region is formed on the first sealing material, and the second region is formed on the second sealing material, and
wherein a first surface roughness of the second region is smaller than a second surface roughness of the first region.