US 12,381,158 B2
Wafer bonding method and bonded device structure
Harry-Haklay Chuang, Zhubei (TW); Yuan-Jen Lee, Hsinchu (TW); Nuo Xu, San Jose, CA (US); Fang-Lan Chu, Taichung (TW); and Wei Cheng Wu, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on May 19, 2022, as Appl. No. 17/748,640.
Claims priority of provisional application 63/321,230, filed on Mar. 18, 2022.
Prior Publication US 2023/0299010 A1, Sep. 21, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/544 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01)
CPC H01L 23/544 (2013.01) [H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 2223/54426 (2013.01); H01L 2224/0213 (2013.01); H01L 2224/08147 (2013.01); H01L 2224/8013 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/80948 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06593 (2013.01); H01L 2924/3511 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
receiving a first wafer and a second wafer, the first wafer comprising a first dielectric layer and a first alignment mark in the first dielectric layer, the first alignment mark comprising a first grid of first magnetic features, the second wafer comprising a second dielectric layer and a second alignment mark in the second dielectric layer, the second alignment mark comprising a second grid of second magnetic features;
aligning the first alignment mark with the second alignment mark in an optical alignment process;
after the optical alignment process, aligning the first alignment mark with the second alignment mark in a magnetic alignment process, north poles of the first magnetic features being aligned with south poles of the second magnetic features, south poles of the first magnetic features being aligned with north poles of the second magnetic features; and
forming bonds between the first wafer and the second wafer by:
forming dielectric-to-dielectric bonds between the first dielectric layer and the second dielectric layer; and
forming metal-to-metal bonds between the first alignment mark and the second alignment mark.