US 12,381,132 B2
Semiconductor device
Fumiyoshi Kawashiro, Tokyo (JP)
Assigned to KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo (JP)
Filed on Sep. 3, 2021, as Appl. No. 17/466,186.
Claims priority of application No. 2021-046291 (JP), filed on Mar. 19, 2021.
Prior Publication US 2022/0301988 A1, Sep. 22, 2022
Int. Cl. H01L 23/495 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01)
CPC H01L 23/49524 (2013.01) [H01L 21/4825 (2013.01); H01L 23/49562 (2013.01); H01L 23/49582 (2013.01); H01L 23/49586 (2013.01); H01L 24/48 (2013.01); H01L 2224/48245 (2013.01); H01L 2924/182 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a lead frame comprising a first bottom surface and at least a recess at an end of the first bottom surface, the recess comprising a first side surface;
a semiconductor chip provided on the lead frame;
a first terminal comprising a second bottom surface extending from the first side surface of the recess, the first terminal electrically connected to the semiconductor chip;
a second terminal having an upper surface; and
a sintered material, provided on the upper surface of the second terminal, including a first portion connected to the first terminal, and a second portion protruding away from the recess.