US 12,381,126 B1
Silicon carbide copper-plated gold-tin-preset heat sink structure and fabrication method thereof
Jiandong Han, Guangdong (CN); Hong Chen, Guangdong (CN); and Shuo Yang, Guangdong (CN)
Assigned to SHENZHEN HONGHAI TECHNOLOGY CO., LTD., Guangdong (CN)
Filed by SHENZHEN HONGHAI TECHNOLOGY CO., LTD., Guangdong (CN)
Filed on Sep. 16, 2024, as Appl. No. 18/885,810.
Claims priority of application No. 202410158337.9 (CN), filed on Feb. 1, 2024.
Int. Cl. H01L 23/373 (2006.01); C23C 28/02 (2006.01)
CPC H01L 23/3736 (2013.01) [C23C 28/021 (2013.01); H01L 23/3738 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A silicon carbide copper-plated gold-tin-preset heat sink structure, comprising a silicon carbide substrate, a first copper plate, a second copper plate and a preset gold-tin layer, wherein the first copper plate is provided on a back side of the silicon carbide substrate, the second copper plate is provided on a front side of the silicon carbide substrate, a thickness of the silicon carbide substrate is larger than thicknesses of the first copper plate and the second copper plate, a width of the silicon carbide substrate is larger than widths of the first copper plate and the second copper plate, the thickness of the first copper plate is the same as the thickness of the second copper plate, the width of the first copper plate is smaller than the width of the second copper plate, the first copper plate and the second copper plate are aligned at one end in a width direction, the preset gold-tin layer is provided on an outer side of the second copper plate, a width of the preset gold-tin layer is the same as the width of the second copper plate, and the preset gold-tin layer is formed on a surface of the second copper plate;
wherein the thickness of the silicon carbide substrate is 0.3 mm to 0.6 mm, and the thicknesses of the first copper plate and the second copper plate are 0.002 mm to 0.09 mm.