US 12,381,121 B2
Method of manufacturing semiconductor devices and corresponding device
Pierangelo Magni, Villasanta (IT); and Michele Derai, Milan (IT)
Assigned to STMicroelectronics S.r.l., Agrate Brianza (IT)
Filed by STMicroelectronics S.r.l., Agrate Brianza (IT)
Filed on Feb. 9, 2024, as Appl. No. 18/437,899.
Application 18/437,899 is a division of application No. 17/411,585, filed on Aug. 25, 2021, granted, now 11,901,250.
Claims priority of application No. 102020000020566 (IT), filed on Aug. 27, 2020.
Prior Publication US 2024/0186198 A1, Jun. 6, 2024
Int. Cl. H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 23/18 (2006.01); H01L 23/498 (2006.01)
CPC H01L 23/3107 (2013.01) [H01L 21/561 (2013.01); H01L 23/18 (2013.01); H01L 23/49838 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
at least one semiconductor chip mounted at a position on a support substrate;
a light-permeable laser direct structuring (LDS) material on the at least one semiconductor chip positioned on the support substrate;
wherein the least one semiconductor chip is visible through the light-permeable LDS material; and
a pattern of electrically-conductive formations for making electrical connection to the at least one semiconductor chip, said pattern of electrically-conductive formations corresponding to laser-beam structured formations at selected spatial locations of the light-permeable LDS material, said selected spatial locations of the light-permeable LDS material referenced to the position the least one semiconductor chip visible through the light-permeable LDS material.