US 12,381,091 B2
Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus
Kimihiko Nakatani, Toyama (JP); Ryota Ueno, Toyama (JP); Motomu Degai, Toyama (JP); Takashi Nakagawa, Toyama (JP); Yoshitomo Hashimoto, Toyama (JP); and Yoshiro Hirose, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on May 22, 2023, as Appl. No. 18/321,255.
Application 18/321,255 is a continuation of application No. 17/377,990, filed on Jul. 16, 2021, granted, now 11,699,593.
Claims priority of application No. 2020-122454 (JP), filed on Jul. 16, 2020.
Prior Publication US 2023/0307246 A1, Sep. 28, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/311 (2006.01); H01L 21/3065 (2006.01); H01L 21/3213 (2006.01)
CPC H01L 21/31116 (2013.01) [H01L 21/3065 (2013.01); H01L 21/32135 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A method of processing a substrate, comprising:
etching a first base on a surface of a substrate by alternately performing:
(a) forming a first layer on at least a portion of a surface of the first base by supplying a first gas to the substrate; and
(b) forming an etching species by supplying a second gas having a molecular structure different from that of the first gas to the substrate to perform at least one selected from the group of causing the second gas to react with the first layer and activating the first layer with the second gas,
wherein in (b), a second layer, which is removable by the first gas, is formed on at least a portion of a surface of the first base after being subjected to contact with the etching species.