US 12,381,079 B2
Method of manufacturing semiconductor device, substrate processing apparatus, recording medium and method of processing substrate
Hideki Horita, Toyama (JP); and Ryota Horiike, Toyama (JP)
Assigned to KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed by KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed on Jan. 13, 2023, as Appl. No. 18/154,492.
Application 18/154,492 is a continuation of application No. 17/030,154, filed on Sep. 23, 2020, granted, now 11,587,788.
Claims priority of application No. 2019-195237 (JP), filed on Oct. 28, 2019.
Prior Publication US 2023/0170215 A1, Jun. 1, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); C23C 16/24 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01)
CPC H01L 21/02645 (2013.01) [C23C 16/24 (2013.01); C23C 16/45544 (2013.01); C23C 16/52 (2013.01); H01L 21/02532 (2013.01); H01L 21/02667 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of processing a substrate, comprising:
(a) forming a layer on a substrate by performing a cycle a predetermined number of times, the cycle including:
(a1) supplying a first gas containing halogen and silicon to the substrate; and
(a2) supplying a second gas containing at least hydrogen to the substrate; and
(b) forming a film containing silicon on the layer by supplying a third gas containing silicon to the substrate,
wherein a pressure of a space in which the substrate is located in (a2) is set higher than a pressure of the space in which the substrate is located in (a1).