US 12,381,070 B2
Substrate treatment apparatus and semiconductor device manufacturing method using the same
Jihwan Kim, Suwon-si (KR); Nam Kyun Kim, Suwon-si (KR); Hyun Bae Kim, Suwon-si (KR); Seungbo Shim, Suwon-si (KR); Hyeongmo Kang, Suwon-si (KR); Kyung-Sun Kim, Suwon-si (KR); Daeun Son, Suwon-si (KR); and Juho Lee, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Sep. 2, 2023, as Appl. No. 18/241,862.
Claims priority of application No. 10-2023-0013771 (KR), filed on Feb. 1, 2023.
Prior Publication US 2024/0258081 A1, Aug. 1, 2024
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32715 (2013.01) [H01J 37/32174 (2013.01); H01J 37/32568 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A substrate treatment apparatus, comprising:
a chucking stage supporting a substrate;
a sinusoidal generator configured to supply a sinusoidal wave to the chucking stage;
a non-sinusoidal generator configured to supply a non-sinusoidal wave to the chucking stage; and
a mixer between each of the sinusoidal and non-sinusoidal generators and the chucking stage,
wherein the chucking stage comprises:
a chuck body; and
a plasma electrode in the chuck body, and
wherein the mixer comprises:
a high pass filter placed between the sinusoidal generator and the plasma electrode, and configured to receive the sinusoidal wave from the sinusoidal generator and transmit the sinusoidal wave to the plasma electrode;
a low pass filter placed between the non-sinusoidal generator and the plasma electrode, and configured to receive the non-sinusoidal wave from the non-sinusoidal generator; and
a band stop filter placed between the low pass filter and the plasma electrode, and configured to receive the non-sinusoidal wave from the low pass filter and transmit the non-sinusoidal wave to the plasma electrode.