US 12,381,069 B2
Plasma processing apparatus and plasma processing method
Akihiro Yokota, Miyagi (JP); Ryo Terashima, Miyagi (JP); Tomo Murakami, Miyagi (JP); and Takaharu Saino, Miyagi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Sep. 6, 2023, as Appl. No. 18/462,258.
Application 18/462,258 is a continuation of application No. PCT/JP2022/011950, filed on Mar. 16, 2022.
Claims priority of application No. 2021-048689 (JP), filed on Mar. 23, 2021.
Prior Publication US 2023/0420228 A1, Dec. 28, 2023
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32669 (2013.01) [H01J 37/32082 (2013.01); H01J 37/32449 (2013.01); H01J 37/32935 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A plasma processing apparatus comprising:
a chamber having an internal space;
a substrate support disposed in the internal space of the chamber;
a gas supply configured to supply a processing gas into the internal space of the chamber;
a plasma generator configured to generate plasma from the processing gas in the internal space of the chamber;
a plurality of annular electromagnet units disposed above the internal space of the chamber and disposed coaxially with respect to an axis passing through the internal space, each of the plurality of annular electromagnet units having one or more electromagnets;
at least one optical sensor configured to detect an emission intensity distribution of plasma in the internal space along a radial direction with respect to the axis;
at least one power source configured to individually supply a current to the plurality of annular electromagnet units; and
a controller configured to adjust currents respectively supplied from the at least one power source to the plurality of annular electromagnet units based on the emission intensity distribution of the plasma detected by the at least one optical sensor.